PTF081301E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

PTF081301E
PTF081301F
Reference Circuit
V DD
C24
0.001µF
QQ1
LM7805
C26
0. 001µF
R7
3.3KV
R1.32K_V
R4
1. 3KV
Q1
BCP56
R5
10KV
C25
0.001µF
R6
22KV
+C101µF
35V
1R01V
C2
0.1µF
50V
5R.21KV
C3
33pF
l4
DUT
RF_IN
l1
l2
C4
33pF
l3
C5
5.0pF
l5
C6
0.5pF
C7
C8
33pF
1µF
L1
V DD
C9
1µF
+1C01µ0F
50V
C11
0.1µF
50V
+1C01µ2F
50V
l7
l6
l8
C6.183pF
C17
33pF
l9
l10 l11
l12
C6.184pF
C0.155pF
C16
0.3pF
L2
RF_OUT
C18
33pF
C19
1µF
C20
1µF
+C102µ1F
50V
C02.12µF
50V
+
C23
10µF
50V
081301_sch
Reference Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF081301E or PTF081301F
ε 0.76 mm [.030"] thick, _r = 4.5
LDMOS Transistor
2 oz. copper
Microstrip
Electrical Characteristics at 960 MHz¹
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10
l11
l12
0.075 λ, 50.0 Ω
0.101 λ, 50.0 Ω
0.055 λ, 50.0 Ω
0.289 λ, 74.0 Ω
0.061 λ, 7.5 Ω
0.036 λ, 7.9 Ω
0.132 λ, 50.0 Ω
0.114 λ, 7.9 Ω
0.047 λ, 7.9 Ω
0.134 λ, 38.0 Ω
0.029 λ, 50.0 Ω
1_{Electrical characteristics rounded}
Dimensions: L x W (mm)
12.70 x 1.35
17.27 x 1.35
9.40 x 1.35
50.80 x 0.64
9.27 x 16.26
5.46 x 15.24
22.61 x 1.27
17.40 x 15.24
7.24 x 15.24
22.35 x 2.16
4.95 x 1.37
Rogers TMM4
Dimensions: L x W (in.)
0.500 x 0.053
0.680 x 0.053
0.370 x 0.053
2.000 x 0.025
0.365 x 0.640
0.215 x 0.600
0.890 x 0.050
0.685 x 0.600
0.285 x 0.600
0.880 x 0.085
0.195 x 0.054
Data Sheet
7 of 11
Rev. 03, 2005-05-02