PTF081301E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

PTF081301E
PTF081301F
Typical Performance (measurements taken in production test fixture)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, f₁ = 959, f₂ = 960 MHz, series show I_DQ
-25
-30
-35
850 mA
-40
950 mA
-45
1050 mA
-50
37 39 41 43 45 47 49
Output Power (dBm ), Avg.
Broadband Performance
V_DD = 28 V, I_DQ = 950 mA, P_OUT = 51.14 dBm
55
15
Ef f iciency
45
5
35 Return Loss
-5
25
Gain
15
860
880
900
920
940
Frequency (MHz)
-15
-25
960
Power Sweep
V_DD = 28 V, f = 960 MHz
19.0
18.5
I_DQ = 1425 mA
18.0
17.5
17.0
16.5
I_DQ = 950 mA
I_DQ = 475 mA
16.0
15.5
15.0
40 42 44 46 48 50 52 54
Output Power (dBm)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 950 mA, f = 960 MHz
21
20
19
Gain
18
17
16
15
14
40 42
70
Ef f icienc y
60
50
40
30
20
10
0
44 46 48 50 52 54
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2005-05-02