PTF081301E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
860
920
940
960
980
Z Source Ω
R
jX
5.35
–3.80
5.41
–2.54
5.43
–2.16
5.42
–1.70
5.48
–1.24
Z Load Ω
R
jX
1.59
0.99
1.56
1.74
1.56
1.91
1.56
2.15
1.50
2.34
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PTF081301E
PTF081301F
Z₀ = 50 Ω
Z Load
980 MHz
860 MHz
Z Source
980 MHz
860 MHz
0 .1
Data Sheet
6 of 11
Rev. 03, 2005-05-02