PTF081301E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

PTF081301E
PTF081301F
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 950 mA, P_OUT = 130 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
G_ps
17
18
η_D
40
42
Intermodulation Distortion
IMD
—
–32
Max
—
—
–29
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, I_DS = 1 A
V_DS = 28 V, I_DQ = 950 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
65
—
I_DSS
—
—
R_DS(on)
—
0.1
V_GS
2.5
2.9
I_GSS
—
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
473
2.70
–40 to +150
0.37
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF081301E
PTF081301F
Package Outline
30248
31248
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTF081301E
PTF081301F
Data Sheet
2 of 11
Rev. 03, 2005-05-02