PTF081301E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

PTF081301E
PTF081301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 869 – 960 MHz
Description
The PTF081301E and PTF081301F are 130-watt, internally-matched
GOLDMOS FETs intended for EDGE and CDMA applications in the 869
to 960 MHz bands. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device
lifetime and reliability.
PTF081301E
Package 30248
PTF081301F
Package 31248
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 950 mA, f = 959.8 MHz
-30
T_CASE = 25°C
-40
T_CASE = 90°C
-50
-60 ^{400 kHz}
60
50
Ef f icienc y
40
30
-70
20
-80
10
600 kHz
-90
0
36 38 40 42 44 46 48 50
Output Power (dBm)
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance
- Average output power = 65 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 950 mA, P_OUT = 65 W, f = 959.8 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–62
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–74
—
dBc
Gain
Drain Efficiency
G_ps
—
18
—
dB
η_D
—
40
—
%
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2005-05-02