BTF50060-1TEA_11 Datasheet, PDF (7/38 Pages) Infineon Technologies AG – Smart High-Side Power Switch, One Channel

BTF50060-1TEA
General Product Characteristics
Table 2 Absolute Maximum Ratings (cont’d)¹⁾
T_j = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Dynamic temperature
increase while switching
Symbol
ΔT_j
Values
Min.
T
y
p
Max.
.
–
60
Unit Note /
Number
Test Condition
K
–
P_4.15
Storage Temperature
ESD Susceptibility
ESD Resistivity HBM
all Pins to GND
ESD Resistivity HBM
V_S vs. GND, V_S vs. OUT,
OUT vs. GND
ESD Resistivity CDM
all pins to GND
ESD Resistivity CDM
corner pins
T_stg
V_ESD1
V_ESD2
V_ESD3
V_ESD4
-55
-2
-4
-500
-750
150 °C –
2
kV
HBM⁷⁾
4
kV
HBM⁷⁾
500 V
750 V
CDM⁸⁾
CDM⁸⁾
P_4.16
P_4.17
P_4.18
P_4.19
P_4.20
1) Not subject to production test, specified by design.
2) In case of reverse polarity voltage on pin IN, I_IN needs to be limited (see P_4.6) by external resistor R_INPUT, see Figure 45.
3) In case of reverse polarity voltage, current through the OUT pin needs to be limited by external circuitry to prevent over
heating (see P_4.14). Power dissipation during reverse polarity voltage can be calculated by Equation (3). Please note,
build-in protection functions are not available during reverse polarity condition.
4) In accordance to AEC Q100-012 and AEC Q101-006.
5) V_S(LD) is set up without the DUT connected to the generator per ISO 7637-1.
6) Test aborted after 1 E6 cycles.
7) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001-2010
8) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1
Datasheet
Speed PROFET^TM
7
Rev. 1.2, 2011-09-01