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| BTF50060-1TEA_11 Datasheet, PDF (12/38 Pages) Infineon Technologies AG – Smart High-Side Power Switch, One Channel | |||
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BTF50060-1TEA
Functional Description
5
Functional Description
5.1
Power Stage
The power stage is built by a P-channel vertical power MOSFET (DMOS). The ON-state resistance RDS(ON)
depends on the supply voltage VS as well as the junction temperature Tj. Figure 26 shows the dependencies for
the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 5.3.4. A HIGH signal at
the input pin (see Chapter 5.2) causes the power DMOS to switch ON. A LOW signal at the input pin causes the
power DMOS to switch OFF.
5.1.1 Switching a Resisitve Load
Defined slew rates for turn ON and OFF as well as edge shaping support PWMâing of the load while achieving
lowest EMC emission at minimum switching losses. Figure 10 shows the typical timing when switching a resistive
load. Please note: if the devices logic is inactive, e.g. because the IN signal was LOW for t > tRESET, the logic of
the device needs a wake-up time of twake for turning the output ON in addition to the turn ON time tON. See also
Figure 11.
VIN
VIN(H),min
VIN(L),max
VOUT
90% VS
70% VS
30% VS
10% VS
tON
tr
(dV/dt)ON
Figure 10 Switching a resistive load
tOFF
t
tf
(dV/dt)OFF
t
Sw itchingR esistiveLoad _F .emf
Datasheet
Speed PROFETTM
12
Rev. 1.2, 2011-09-01
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