BFP740FESD_12 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740FESD
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Product Brief
Product Brief
The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to V_CEO = 4.2 V and currents up to I_C = 45 mA. The device is especially suited for mobile
applications in which low power consumption is a key requirement. The typical transition frequency is
approximately 47 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier
applications. The transistor is fitted with internal protection circuits, which enhance the robustness against
electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic
package with visible leads.
Data Sheet
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Revision 1.2, 2012-10-11