BFP740FESD_12 Datasheet, PDF (24/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740FESD
Electrical Characteristics
10 GHz
3
4
5
10 MHz ¹⁰
-0.2
-0.4
Step 1 GHz
Figure 5-15 Output Matching S₂₂ = f (f), V_CE = 3 V, I_C = 6 / 25 mA
I_c = 6mA
I_c = 25mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
II_CC
=
=
25mA
6.0mA
0.2
0
0
2
4
6
8
10
f [GHz]
Figure 5-16 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 6 / 25 mA, Z_S = Z_opt
Data Sheet
24
Revision 1.2, 2012-10-11