BFP740FESD_12 Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740FESD
Electrical Characteristics
10 GHz
3
4
5
10 MHz ¹⁰
-0.2
-0.4
Step 1 GHz
Figure 5-13 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 25 mA
I_c = 6 mA
I_c = 25 mA
5.5 GHz
2.4 GHz
3
4
5
10
0.45 GHz
10 GHz
-0.2
-0.4
I_c = 6 mA
I_c = 25 mA
Figure 5-14 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 25 mA
Data Sheet
23
Revision 1.2, 2012-10-11