BFP740FESD_12 Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740FESD
Electrical Characteristics
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V_CB [V]
Figure 5-9 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
50
45
40
35
30
G
ms
25
20
15
|S₂₁|²
10
5
0
0123456
f [GHz]
Figure 5-10 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 25 mA
G_ma
78
9 10
Data Sheet
21
Revision 1.2, 2012-10-11