BFP740FESD_12 Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740FESD
Electrical Characteristics
44
41
0.15GHz
38
35
0.45GHz
32
0.90GHz
29
1.50GHz
1.90GHz
26
2.40GHz
3.50GHz
23
20
5.50GHz
17
14
10.00GHz
11
8
5
0 5 10 15 20 25 30 35 40 45
I_C [mA]
Figure 5-11 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
44
41
38
0.15GHz
35
0.45GHz
32
0.90GHz
29
1.50GHz
26
21..4900GGHHzz
3.50GHz
23
20
5.50GHz
17
14
10.00GHz
11
8
5
0
1
2
3
4
5
V_CE [V]
Figure 5-12 Maximum Power Gain G_max = f (V_CE), I_C = 25 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.2, 2012-10-11