BFP196W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=50mA
dB
0.9GHz
14
12
0.9GHz
1.8GHz
10
8
1.8GHz
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
38
dBm
8V
34
5V
32
30
28
3V
26
24
2V
22
20
18
1V
16
14
0
20
40
60
80 mA
120
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
32
dB
I_C=50mA
28
26
24
22
20
18
16
14
12
10
8
8V
6
1V
0.7V
4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
V_CE = Parameter
32
I_C=50mA
dB
24
20
16
12
8
4
8V
0
1V
0.7V
-4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jun-22-2001