BFP196W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
2.0
pF
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
7.5
GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10V
5V
3V
2V
1V
0.7V
20
40
60
80 mA
120
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
18
17
8V
3V
16
2V
15
14
13
12
1V
11
10
0.7V
9
8
0
20
40
60
80 mA
120
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
dB
8V
3V
10
2V
9
8
7
1V
6
5
0.7V
4
0
20
40
60
80 mA
120
I_C
6
Jun-22-2001