BFP196W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.7264 fA
VAF = 20
V
BF = 125
-
IKF = 0.4294 A
NE = 1.1766 -
BR = 10.584 -
VAR = 3.8128 V
NC = 0.88299 -
RBM = 1


IKR =
RB =
RE =
0.019511 A
1.2907

0.75103

CJE = 13.325 fF
TF =
23.994 ps
VJE = 0.7308 V
XTF = 0.44322 -
ITF = 1.9775 mA PTF = 0
deg
VJC = 0.73057 V
MJC = 0.3289 -
TR =
2.2413 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC = 0.50922 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
NF = 0.80012 -
ISE = 119.22 fA
NR = 0.94288 -
ISC = 4.8666 fA
IRB =
RC =
0.084011 mA
0.27137

MJE = 0.33018 -
VTF = 0.1
V
CJC = 1667
fF
XCJC = 0.29998 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
Package Equivalent Circuit:
L_BI =
0.43
nH
L_BO = 0.47
nH
L_EI =
0.26
nH
L_EO = 0.12
nH
L_CI =
0.06
nH
L_CO = 0.36
nH
C_BE = 68
fF
C_CB = 46
fF
C_CE = 232
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-22-2001