BFP196W Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor

For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 89 mA

Power amplifier for DECT and PCN systems

f_T = 7.5 GHz
F = 1.5 dB at 900 MHz
BFP196W
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP196W
Marking
RIs
Pin Configuration
1=E 2=C 3=E 4=B
Package
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
69 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
12
V
20
20
2
100
mA
12
700
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point ²⁾
R_thJS

115
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jun-22-2001