BFP196W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 70 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 20 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
f_T
5
7.5
- GHz
C_cb
-
1 1.4 pF
C_ce
- 0.36 -
C_eb
-
3.7
-
F
dB
-
1.5
-
-
2.5
-
Power gain, maximum available ¹⁾
I_C = 50 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
G_ma
f = 1.8 GHz
- 17.5 -
- 11.5 -
Transducer gain

I_C = 50 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
- 12.5 -
-
6.5
-
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Jun-22-2001