PXAC243502FV_15 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PXAC243502FV
Load Pull Performance
Main Side – Pulsed CW signal: 160 µsec, 10% duty cycle; V_DD = 28 V, I_DQ = 850 mA
Class AB
Max Output Power
P_1dB
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT P_OUT
PAE
Zl
[W]
[dB] [dBm] [W]
[%]
[W]
2300 6.82 – j9.56 1.28 – j3.64 16.16 52.39 173.38 49.67 2.37 – j2.28
2350 8.29 – j9.42 1.25 – j3.62 16.44 52.20 165.96 49.05 1.97 – j2.50
2400 10.06 – j7.29 1.30 – j3.61 16.46 51.82 152.05 45.61 1.99 – j2.24
Max PAE
Gain
[dB]
P_OUT
[dBm]
18.79 50.39
18.63 50.66
18.90 50.15
P_OUT
[W]
109.47
116.49
103.49
PAE
[%]
59.01
57.37
54.87
Peak Side – Pulsed CW signal: 160 µsec, 10% duty cycle; V_DD = 28 V, I_DQ = 1350 mA
Class AB
Max Output Power
P_1dB
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT P_OUT
PAE
Zl
[W]
[dB] [dBm] [W]
[%]
[W]
2300 3.27 – j6.01 2.09 – j3.76 17.42 53.03 200.91 48.19 1.43 – j2.25
2350 4.08 – j6.00 2.03 – j3.86 17.54 52.77 189.23 45.76 1.33 – j2.63
2400 5.14 – j6.25 1.90 – j3.64 18.08 52.61 182.39 45.91 1.49 – j2.71
Max PAE
Gain
[dB]
P_OUT
[dBm]
19.79 51.17
19.82 51.31
20.01 51.45
P_OUT
[W]
130.98
135.33
139.57
PAE
[%]
55.51
53.60
51.41
Peak Side – Pulsed CW signal: 160 µsec, 10% duty cycle; V_DD = 28 V, V_GS(peak) = 1.5 V
Class C
Max Output Power
P_1dB
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT P_OUT
PAE
Zl
[W]
[dB] [dBm] [W]
[%]
[W]
2300 3.27 – j6.01 1.67 – j4.02 12.90 53.71 234.96 50.13 1.42 – j2.66
2350 4.08 – j6.00 1.62 – j4.07 13.16 53.57 227.51 50.21 1.37 – j2.69
2400 5.14 – j6.25 1.96 – j4.15 13.39 53.43 220.29 48.66 1.47 – j2.71
Max PAE
Gain
[dB]
P_OUT
[dBm]
14.27 52.51
14.53 51.75
14.74 51.79
P_OUT
[W]
178.28
149.62
150.83
PAE
[%]
59.99
58.18
56.64
Reference Circuit, 2300 to 2400 MHz
DUT
PXAC243502FV V1
Test Fixture Part No.
LTA/PXAC243502FV V1
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε_r = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower)
Data Sheet
6 of 10
Rev. 03.1, 2015-04-13