PXAC243502FV_15 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

Typical RF Performance (cont.)
Single-carrier WCDMA
Broadband Performance
V_DD = 28 V, I_DQ = 850 mA, P_OUT = 48.3 dBm,
3GPP WCDMA signal, 10 dB PAR
-10
-5
Input Return Loss
-15
-10
-20
-15
-25
-20
-30
-25
ACP up
-35
-30
-40
2150
2250
2350
2450
Frequency (MHz)
c243502fv-gr4
-35
2550
PXAC243502FV
CW Performance
V_DD = 28 V, I_DQ = 850 mA
20
60
Efficiency
50
15 _Gain
40
30
10
20
2400 MHz
2350 MHz
10
2300 MHz
5
c243502fv-gr5
0
29 33 37 41 45 49 53 57
Output Power (dBm)
Pulse CW Performance
at selected V_DD
I_DQ = 850 mA, ƒ = 2300 MHz
20
60
Efficiency
15
40
Gain
10
5
27
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
35
43
51
Output Power (dBm)
20
c243502fv-gr6a
0
59
Pulse CW Performance
at selected V_DD
I_DQ = 850 mA, ƒ = 2350 MHz
20
60
Efficiency
15 _Gain
40
10
5
27
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
35
43
51
Output Power (dBm)
20
c243502fv-gr6b
0
59
Data Sheet
4 of 10
Rev. 03.1, 2015-04-13