PXAC243502FV_15 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PXAC243502FV
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

Gate Leakage Current
On-State Resistance
main
peak
Operating Gate Voltage main
peak
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 850 mA
V_DS = 28 V, I_DQ = 0 mA
Symbol
V(_BR)DSS
I_DSS
I_DSS
I_GSS
R_DS(on)
R_DS(on)
V_GS
V_GS
Min
65
—
—
—
—
—
2.3
0.8
Typ
—
—
—
—
0.088
0.088
2.6
1.2
Max
—
1
10
1
—
—
3.0
1.6
Unit
V
µA
µA
µA
W
W
V
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 250 W CW)
Ordering Information
Symbol Value
V_DSS
V_GS
V_DD
T_J
T_STG
R_qJC
65
–6 to +10
0 to +32
225
–65 to +150
0.22
Unit
V
V
V
°C
°C
°C/W
Type and Version
PXAC243502FV V1
PXAC243502FV V1 R250
Order Code
PXAC243502FVV1XWSA1
PXAC243502FVV1R250XTMA1
Package and Description
H-37275-4
H-37275-4
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 03.1, 2015-04-13