PXAC243502FV_15 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PXAC243502FV
High Power RF LDMOS Field Effect Transistor
350 W, 28 V, 2300 – 2400 MHz
Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET de-
signed for use in power amplifier applications in the 2300 MHz to
2400 MHz frequency band. Features include an asymmetric design
with high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXAC243502FV
Package H-37275-4
Single-carrier WCDMA
Broadband Performance
V_DD = 28 V, I_DQ = 850 mA, P_OUT = 48.3 dBm,
3GPP WCDMA signal, 10 dB PAR
20
55
18
Efficiency ₄₅
16
35
Gain
14
25
12
15
10
2150
2250
2350
2450
Frequency (MHz)
c243502fv-gr3
5
2550
Features
• Asymmetric design
- Main: 150 W P1dB
- Peak: 200 W P1dB
• Broadband internal matching
• CW performance at 2350 MHz, 28 V
- Ouput power = 250 W P_1dB
- Efficiency = 46%
- Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture in Doherty configuration)
V_DD = 28 V, V_GS(peak) = 1.0 V, I_DQ = 850 mA, P_OUT = 68 W avg, ƒ = 2400 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
14.0 15.0
—
h_D
42
45
—
ACPR
—
–32
–26
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2015-04-13