PXAC243502FV_15 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PXAC243502FV
Typical RF Performance (data taken in production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 850 mA, ƒ = 2300 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
60
Efficiency
20
40
16 ^Gain
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
27
c243502fv-gr1a
-60
32
37
42
47
52
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 850 mA, ƒ = 2350 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
60
Efficiency
20
40
Gain
16
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
27
32
37
42
47
Average Output Power (dBm)
c243502fv-gr1b
-60
52
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 850 mA, ƒ = 2400 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
60
Efficiency
20
40
16 ^Gain
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
27
c243502fv-gr1c
-60
32
37
42
47
52
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 850 mA,
ƒ = 2300 to 2400 MHz. 3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
2300 ACPL
2350 ACPL
-10
2400 ACPL
2300 ACPU
60
2350 ACPU
2400 ACPU
-20
2300 EFF
2400 EFF
2350 EFF
50
-30
40
ACP up, ACP low
-40
30
-50
20
-60
-70
27
Efficiency
32
37
42
10
47
c243502fv-gr2a
0
52
Average Output Power (dBm)
Data Sheet
3 of 10
Rev. 03.1, 2015-04-13