PTFB241402F Datasheet, PDF (6/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

PTFB241402F
Customer-Specific Spec — Not for General Release
Reference Circuit
This reference circuit is designed to test only one side at a time. This block diagram shows the configuration for testing Side 2.
To test Side 1, move capacitors C807 and C901 to close the circuit to Side 1.
VDD
C804
1000 pF
S1
8
In
1
Out
NC
4
2
3
NC
5
6
7
C803
1000 pF
R802
2000 Ohm
C805
1000 pF
R801
1200 Ohm
S6
R804
1300 Ohm
2C
1
4
S
B
3E
S2
R805
3000 Ohm
R 803
10 Ohm
3
TL801
TL820 2
3
1
TL828
TL826
2
1
3
C802
10000000 pF
TL829
TL815
1
2
3
S4 ¹
3
4
2
TL834
L801
22 nH
TL836
R806
10 Ohm
RF IN
TL816
TL835
2
3
1
TL803
C808
1.2 pF
C807
16 pF
TL802
TL813
2
3
1
TL843
C806
1.2 pF
TL840
TL839
2
3
1
TL830
TL809 TL811
3
2
1
TL814 TL807
Pin G1
GATE DUT
SIDE 1
TL825
TL823
1
3
2
TL821
2
3
1
TL838
TL804
TL808
R807
3000 Ohm
TL810 TL812
2
1
3
R808
10 Ohm
TL833
TL831
TL806
Pin G2
GATE DUT
SIDE 2
TL842
TL841
S3
3
TL837
TL824
TL818
3
2
1
TL819
R809
10 Ohm
L802
22 nH
C801
10000000 pF
TL805
TL827
3
2
1
TL832
S5
3
2
1
4
TL822
TL817
3
2
1
B 2 4 1 4 0 2 e f _ b d i n _ 0 3 - 15 - 2 0 1 0
Reference circuit input schematic for ƒ = 2380 MHz
Data Sheet
6 of 13
Rev. 03, 2010-04-19