PTFB241402F Datasheet, PDF (3/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

PTFB241402F
Customer-Specific Spec — Not for General Release
Typical Performance (data taken in a production test fixture)
CW Performance, Single Side
V_DD = 30 V, I_DQ = 660 mA
18.0
60
17.0
50
16.0 _Gain
40
15.0
-25°C
30
25°C
Efficiency
90°C
14.0
20
40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
CW Sweep at P_-1dB, Single Side
V_DD = 30 V, I_DQ = 660 mA
17.5
60
Gain
17.0
50
16.5
40
Efficiency
16.0
2320 MHz
30
2350 MHz
2380 MHz
15.5
20
40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
CW Gain & Efficiency
vs. Output Power & V_DD, Single Side
ƒ = 2350 MHz, I_DQ = 660 mA
17.5
60
Gain
17.0
50
16.5
40
16.0 ^Efficiency
30
15.5
V_DD = 32 V
20
V_DD = 30 V
V_DD = 28 V
15.0
10
39 40 41 42 43 44 45 46 47 48 49 50
Output Power (dBm)
Small Signal CW Gain &
Input Return Loss, Single Side
V_DD = 30 V, I_DQ = 660 mA
18.0
0
17.5
Gain
-5
17.0
-10
16.5
-15
16.0
-20
15.5
15.0
2150
IRL
2250
2350
2450
Frequency (MHz)
-25
-30
2550
Data Sheet
3 of 13
Rev. 03, 2010-04-19