PTFB241402F Datasheet, PDF (2/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

PTFB241402F
Customer-Specific Spec — Not for General Release
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 30 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 660 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
65
—
I_DSS
—
—
I_DSS
—
—
R_DS(on)
—
0.3
V_GS
2.3
2.8
I_GSS
—
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 140 W CW )
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.38
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB241402F V1
PTFB241402F V1 R250
Package Outline
H-37248-4
H-37248-4
Package Description
Thermally-enhanced earless flange
Thermally-enhanced earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 13
*See Infineon distributor for future availability.
Rev. 03, 2010-04-19