PTFB241402F Datasheet, PDF (1/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

Customer-Specific Spec — Not for General Release
High Power RF LDMOS Field Effect Transistor
140 W, 2300 – 2400 MHz
Description
The PTFB241402F integrates two LDMOS FETs into one open-cavity
ceramic package. It is designed for cellular amplifier applications in
the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s
advanced LDMOS process, this device offers excellent thermal
performance and superior reliability.
PTFB241402F
Package H-37248-4
PTFB241402F
CW Performance, Single Side
V_DD = 30 V, I_DQ = 660 mA
17.4
60
17.2
55
17.0
50
16.8
Gain
45
16.6
40
16.4
35
16.2
30
2320 MHz
16.0
2350 MHz
25
15.8
Efficiency
2380 MHz
20
15.6
15
40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
Features
• Broadband internal matching
• Typical CW performance, single side
- Output power (1dB compression) = 70 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 30 V, 70 W
(CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (tested in Infineon test fixture, combined outputs)
V_DD = 30 V, I_DQ = 1200 mA, P_OUT = 110 W PEP, ƒ = 2370 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
G_ps
16.5
17
Drain Efficiency
η_D
34.5
37
Intermodulation Distortion
IMD
—
–32
Max
—
—
–30
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03, 2010-04-19