PTFB241402F Datasheet, PDF (12/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

PTFB241402F
Customer-Specific Spec — Not for General Release
Package Outline Specifications
2X 4.826±0.510
[.190±0.020]
Package H-37248-4
2X 45° X 2.720
[45° X .107]
(8.890
[.350])
C_L
D1
D2
FLANGE 9.779
LID 9.398
[.370]
[.385]
4X
R0.762
+0.127
-0.380
[
R.030
+0.005
-0.015
]
C_L
19.431±0.510
[.765±0.020]
SPH 1.575
[.062]
3.759
+0.254
-0.127
[
.148
+0.010
-0.005
]
S
G1
G2
2X 12.700
[.500]
4X 3.810
[.150]
19.812±0.200
[.780±0.008]
CL
20.574
[.810]
H-37248-4_po_02-18-2010
1.016
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 = drains; S = source; G1, G2 = gates.
5. Lead thickness: 0.102 +0.076/–0.025 [0.004+0.003/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 03, 2010-04-19