PTFA210301E Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

PTFA210301E
Reference Circuit
0C.0101µF
R2
1.3KV
R1
1.2KV
QQ1
LM7805
Q1
VDD
BCP56
C0.2001µF _C3
0.001µF
R2K3 _V
R2K4 _V
R105 _V
R6
5.1KV
1C04µF
C5 R7
0.1µF 5.1KV
C6
1µF
35V
RF_IN
l1
l2
l3
C10 C11
0.3pF 10pF
C7
0.1µF
R8
1KV
C8
.01µF
C109pF
l7
R9
10V
l4 l5 l6
DUT
C12
10pF
C13
0.02µF
l8
l9
l 10 l11
VDD
C1µ1F4
C15
10µF
50V
l12
l13
C16 C17
0.7pF 10pF
RF_OUT
Reference Circit Schematic for f = 2140 MHz
Circuit Assembly Information
DUT
PTFA210301E
PCB
0.76 mm [.030”] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
Microstrip
Electrical Characteristics at 2140 MHz¹
l1
0.013 λ, 50.0 Ω
l2
0.081 λ, 50.0 Ω
l3
0.108 λ, 42.0 Ω
l4
0.172 λ, 61.0 Ω
l5
0.013 λ, 42.0 Ω
l6
0.023 λ, 15.0 Ω
l7
0.063 λ, 9.9 Ω
l8
0.171 λ, 53.0 Ω
l9
0.039 λ, 6.5 Ω
l10 (taper)
0.185 λ, 6.5 Ω / 50.0 Ω
l11
0.025 λ, 50.0 Ω
l12
0.128 λ, 50.0 Ω
l13
0.057 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
1.02 x 1.42
6.17 x 1.42
8.23 x 1.85
13.39 x 0.94
0.94 x 1.85
1.63 x 7.57
4.29 x 12.07
13.13 x 1.22
2.64 x 19.10
4.70 x 19.10 / 1.37
1.88 x 1.42
9.78 x 1.42
4.32 x 1.42
A210301ef_sch
2 oz. copper
Dimensions: L x W (in.)
0.040 x 0.056
0.243 x 0.056
0.324 x 0.073
0.527 x 0.037
0.037 x 0.073
0.064 x 0.298
0.169 x 0.475
0.517 x 0.048
0.104 x 0.752
0.185 x 0.752 / 0.054
0.074 x 0.056
0.385 x 0.056
0.170 x 0.056
Data Sheet
6 of 9
Rev. 03, 2008-03-04