PTFA210301E Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

PTFA210301E
Typical Performance (data taken in a production test fixture)
Broadband Performance
V_DD = 28 V, I_DQ = 300 mA, P_OUT = 38.0 dBm
35
-5
30
Return Loss _-10
25
-15
20 _Efficiency
-20
15 _Gain
-25
10
-30
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 300 mA, f = 2170 MHz
19
T_CASE = 25°C
T_CASE = 90°C
18
17
Gain
16
60
50
Efficiency
40
30
15
20
14
0
10
20
30
40
Output Power (W)
10
50
Two-carrier WCDMA at Various Biases
V_DD = 28 V, f = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-32
400 mA
-37
-42
-47
-52
-57
27
250 mA
350 mA
300 mA
30
33
36
39
Output Power, Avg. (dBm)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28V I_DQ = 300 m A, f = 2140 MHz,
P_OUT = 45 dBm PEP
-20
-25
3rd Order
-30
-35
-40
5th
-45
-50
-55
7th
-60
05
10 15
20 25 30 35 40
Tone Spacing (MHz)
Data Sheet
3 of 9
Rev. 03, 2008-03-04