PTFA210301E Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

Typical Performance (cont.)
2-Tone Drive-up
V_DD = 28 V, I_DQ = 300 mA,
f = 2140 MHz, tone spacing = 1 MHz
-20
45
Efficiency
-25
40
-30
35
-35
IM3 ₃₀
-40
25
-45
IM5 ²⁰
-50
15
-55
10
IM7
-60
5
-65
0
30 32 34 36 38 40 42 44 46 48
Output Power, PEP (dBm)
PTFA210301E
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 300 m A, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-35
40
ACPR Up
-40
ACPR Low
30
-45
Efficiency
20
-50
10
-55
28
0
32
36
40
Average Output Power (dBm)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 300 mA, f = 2140 MHz,
P_OUT (PEP) = 45 dBm, tone spacing = 1 MHz
-10
50
-15
45
-20
-25
-30 _{IM3 Up}
-35
Efficiency ⁴⁰
35
30
25
20
-40
Gain ¹⁵
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.06 A
1.03
0.20 A
1.02
0.33 A
1.01
0.50 A
1.10 A
1.00
1.50 A
0.99
2.00 A
0.98
2.50 A
3.00 A
0.97
0.96
0.95
-20
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 9
Rev. 03, 2008-03-04