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PTFA210301E Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | |||
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PTFA210301E
Thermally-Enhanced High Power RF LDMOS FET
30 W, 2110 â 2170 MHz
Description
The PTFA210301E is a thermally-enhanced, 30-watt, internally
matched GOLDMOS FET intended for WCDMA applications. It is
optimized for single- and two-carrier WCDMA operation from 2110
to 2170 MHz. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device
lifetime and reliability.
PTFA210301E
Package H-30265-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 300 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-25
30 IM3
Efficiency
-30
25
-35
20
IM3 Up
-40
IM3 Low
15
-45
10
ACPR
-50
5
-55
0
27 29 31 33 35 37 39 41
Average Output Power (dBm)
Features
⢠Thermally-enhanced packaging, Pb-free and
RoHS-compliant
⢠Broadband internal matching
⢠Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 33 dBm
- Linear Gain = 16.5 dB
- Intermodulation distortion = â50 dBc
- Adjacent channel power = â52 dBc
⢠Typical CW performance, 2170 MHz, 28 V
- Output power at Pâ1dB = 40 W
- Efficiency = 59%
⢠Integrated ESD protection: Human Body Model,
Class 2 (minimum)
⢠Excellent thermal stability, low HCI drift
⢠Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
RF Characteristics
2-Carrier WCDMA Measurements (not subject to production testâverified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 300 mA, POUT = 8 W average
f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Gps
â
17
â
dB
Drain Efficiency
ηD
â
27
â
%
Intermodulation Distortion
IMD
â
â38
â
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
Data Sheet
1 of 9
Rev. 03, 2008-03-04
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