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PTFA210301E Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | |||
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PTFA210301E
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 300 mA, POUT = 30 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps
16
17
ηD
34
36
IMD
â
â32
Max
â
â
â30
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 300 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
â
â
â
2.0
â
Typ
â
â
â
0.23
2.5
â
Max
â
1.0
10.0
â
3.0
1.0
Unit
V
µA
µA
â¦
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 30 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
â0.5 to +12
200
145
0.83
â40 to +150
1.2
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA210301E V1
Package Outline
H-30265-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTFA210301E
*See Infineon distributor for future availability.
Data Sheet
2 of 9
Rev. 03, 2008-03-04
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