English
Language : 

PTFA190451E Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
Confidential, Limited Internal Distribution
Reference Circuit
PTFA190451E
PTFA190451F
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R4
2K V
R5
10 V
C4
10µF
35V
R6
1K V
C5
0.1µF
R7
1K V
RF_IN
C9
10p F
l1
l2
R8
5.1K
C6
C7
1µF
0.01µF
l3
l4
C10
2.8pF
C8
10pF l7
R9
10 V
l6
DUT
l5
C11
C12
C13
10pF 0.02µF 1µF
VDD
C14
22µF
50V
l10
C16
10pF
l8
l9 l11
l12
l13
C15
0.7pF
RF_OUT
a190451ef_sch
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT
PTFA190451E or PTFA190451F
PCB
0.76 mm [.030"] thick, εr = 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Microstrip Electrical Characteristics at 1960 MHz1
l1
0.031 λ, 50.0 Ω
l2
0.089 λ, 50.0 Ω
l3
0.076 λ, 50.0 Ω
l4
0.045 λ, 6.7 Ω
l5
0.014 λ, 6.7 Ω
l6
0.007 λ, 77.0 Ω
l7
0.123 λ, 72.0 Ω
l8
0.016 λ, 8.5 Ω
l9
0.096 λ, 8.5 Ω
l10
0.171 λ, 67.0 Ω
l11
0.053 λ, 41.0 Ω
l12
0.063 λ, 41.0 Ω
l13
0.030 λ, 54.0 Ω
1Electrical characteristics are rounded.
Dimensions: L x W ( mm)
2.79 x 1.57
8.26 x 1.57
7.04 x 1.57
3.84 x 21.08
1.14 x 21.08
0.64 x 0.76
11.66 x 0.89
1.30 x 16.21
8.13 x 16.21
16.13 x 1.04
4.80 x 2.31
5.72 x 2.31
2.79 x 1.52
Dimensions: L x W (in.)
0.110 x 0.062
0.325 x 0.062
0.277 x 0.062
0.151 x 0.830
0.045 x 0.830
0.025 x 0.030
0.459 x 0.035
0.051 x 0.638
0.320 x 0.638
0.635 x 0.041
0.189 x 0.091
0.225 x 0.091
0.110 x 0.060
Data Sheet
6 of 10
Rev. 03.1, 2009-02-20