PTFA190451E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 450 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-25
35
-30
30
Efficiency
-35
25
-40
ACPR Up
-45
20
ACPR Low ₁₅
-50
10
-55
5
30 32 34 36 38 40 42 44
Average Output Power (dBm)
PTFA190451E
PTFA190451F
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V I_DQ = 450 mA, ƒ = 1960 MHz,
P_OUT = 46.5 dBm PEP
-20
-25
3rd
-30
-35
-40
5th
-45
-50 _7th
-55
05
10 15 20 25 30 35 40
Tone Spacing (MHz)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 450 mA, ƒ = 1960 MHz, P_OUT (PEP) = 46.5 dBm,
tone spacing = 1 MHz
-10
50
-15
45
-20 _{IM3 Up}
-25
-30
-35
Efficiency ⁴⁰
35
30
25
20
-40
Gain ¹⁵
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
6-Carrier TD-SCDMA Performance
V_DC = 28 V, I_DQ = 380 mA, ƒ_o = 2017.5 MHz
25
-10
20
-20
15
Efficiency
10
Adj Up ^-30
Alt Up
-40
5
-50
Adj Low Alt Low
0
-60
29
31
33
35
37
39
Output Power, Avg. (dBm)
*See Infineon distributor for future availability.
Data Sheet
4 of 10
Rev. 03.1, 2009-02-20