PTFA190451E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1930 – 1990 MHz
Description
The PTFA190451E and PTFA190451F are thermally-enhanced,
45-watt, internally matched LDMOS FETs designed for WCDMA,
TD-SCDMA and other cellular standards in the 1930 to 1990 MHz
frequency band. These devices are available in thermally-enhanced
packages with eared or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA190451E
Package H-36265-2
PTFA190451F
Package H-37265-2
PTFA190451E
PTFA190451F
2-Carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-25
35
Efficiency
-30
30
-35
IM3
25
-40
20
-45
15
ACPR
-50
10
-55
5
30
32
34
36
38
40
42
Average Output Power (dBm)
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960
MHz, 28 V
- Average output power = 11 W
- Linear gain = 17.5 dB
- Efficiency = 28.0%
- Intermodulation distortion = –39 dBc
- Adjacent channel power = –42 dBc
• Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W
- Efficiency = 60%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 450 mA, P_OUT = 11 W average
ƒ₁ = 1955 MHz, ƒ₂ = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
G_ps
16.5 17.5
—
Drain Efficiency
η_D
27
28
—
Intermodulation Distortion
IMD
—
–39
–37
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2009-02-20