PTFA190451E Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
|
2.09 A
2.78 A
3.48 A
4.17 A
0
20 40 60 80 100
Case Temperature (°C)
PTFA190451E
PTFA190451F
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1900
1930
1960
1990
2020
Z Source Ω
R
jX
15.51
–0.094
16.30
–0.444
17.19
–0.881
18.02
–1.437
18.79
–2.315
Data Sheet
2020 MHz
1900 MHz
Z Load
0.1
Z Source
1900 MHz
2020 MHz
5 of 10
Z Load Ω
R
jX
5.73
–1.71
5.68
–1.52
5.69
–1.31
5.63
–1.08
5.61
–0.91
Z₀ = 50 Ω
Rev. 03.1, 2009-02-20