PTFA190451E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA190451E
PTFA190451F
Broadband Performance
V_DD = 28 V, I_DQ = 450 mA, P_OUT = 12 W
40
-5
35
-10
Return Loss
30
-15
25
Efficiency
-20
20
-25
15
Gain
-30
10
1900
1920
1940 1960 1980
Frequency (MHz)
2000
-35
2020
2-Tone Drive-up
V_DD = 28 V, I_DQ = 450 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
34
45
Efficiency
40
IM3
35
IM5 ₃₀
25
20
IM7 ₁₅
10
5
36 38 40 42 44 46 48
Output Power, PEP (dBm)
Two-carrier WCDMA at Various Biases
V_DD = 28 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-32
-37 ^{550 mA}
500 mA
-42
-47
-52
-57
30
350 mA
400 mA
450 mA
32 34 36 38 40 42
Output Power, Avg. (dBm)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 450 mA, ƒ = 1990 MHz
19
T_CASE = 25°C
T_CASE = 90°C
70
Gain
18
60
17
50
16
40
15
30
Efficiency
14
20
13
0
10
10
20
30
40
50
60
Output Power (W)
Data Sheet
3 of 10
Rev. 03.1, 2009-02-20