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| PTAC240502FC Datasheet, PDF (6/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET | |||
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PTAC240502FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTAC240502FC V1
Test Fixture Part No.
LTA/PTAC240502FC V1
PCB
Rogers 4350, 0.508 mm [0.020â] thick, 2 oz. copper, ï¥r = 3.66, Æ = 2300 â 2400 MHz
Find Gerber ï¬les for this test ï¬xture on the Inï¬neon Web site at http://www.inï¬neon.com/rfpower
Components Information
Component
Description
Input
C101, C105
Capacitor, 4.7 µF
C102, C103, C104, Capacitor, 18 pF
C106
R101, R102
Resistor, 10 ï
R103
Resistor, 50 ï
R104
Resistor, 300 ï
R105
Resistor, 12.1 ï
U1
Directional coupler
Suggested Manufacturer
Murata Electronics North America
ATC
Panasonic Electronic Components
Anaren
Venkel
Venkel
Anaren
P/N
GRM32ER71H475KA88L
ATC800A180JT250T
ERJ-8GEYJ100V
060120A15Z50
CR0603-16W-3010FB
CR0603-16W-12R1FB
X3C25P1-05S
Output
C201, C202, C203,
C204, C206, C208
C205
C207, C210, C214
C209, C212
C211, C213
Capacitor, 18 pF
Capacitor, 0.5 pF
Capacitor, 4.71 µF
Capacitor, 10 µF
Capacitor, 100 µF
ATC
ATC
Murata Electronics North America
Taiyo Yuden
Panasonic Electronic Components
ATC800A180JT250T
ATC800A180JT250T
GRM32ER71H475KA88L
UMK325C7106MM-T
EEE-FP1V101AP
Pinout Diagram (top view)
Peak
Main S
D1
D2
G1
G2
H-37248-4__do_pd_10-10-2012
Pin Description
D1
Drain device 1 (Peak)
D2
Drain device 2 (Main)
G1
Gate device 1 (Peak)
G2
Gate device 2 (Main)
S
Source (ï¬ange)
Lead connections for PTAC240502FC
Data Sheet
6 of 8
Rev. 02.2, 2014-05-14
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