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PTAC240502FC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET
PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET
50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a 47-watt LDMOS FET with an
asymmetrical design intended for use in multi-standard cellular
power amplifier applications in the 2300 to 2400 MHz frequency
band. Features include dual-path design, input matching, high gain
and thermally-enhanced package with earless flanges. Manu-
factured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, VGS1 = 2.6 V,
VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
16
60
15
50
Gain
14
40
13
30
12
Efficiency
20
11
10
10
26
ptac240502fc_g1
0
30
34
38
42
46
Output Power (dBm)
PTAC240502FC
Package H-37248-4
Features
• Input matched
• Asymmetric Doherty design
- Main: P1dB = 17 W Typ
- Peak: P1dB = 33 W Typ
• Typical Pulsed CW performance, 2350 MHz,
28 V, 160 µs pulse width, 10% duty cycle,
Doherty Configuration
- Output power at P1dB = 45.7 W
- Efficiency = 46.2%
- Gain = 14.6 dB
• Typical single-carrier WCDMA performance,
2350 MHz, 28 V, 8.4 dB PAR @ 0.01% CCDF
- Output power = 8.91 W
- Efficiency = 44.2%
- Gain = 14.2 dB
- ACPR = –31 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 50 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 120 mA, POUT = 10 W avg, VGS2 = 1.3 V, ƒ1 = 2345 MHz, ƒ2 = 2355 MHz, 3GPP signal,
channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps
13
14.3
D
41
44
IMD
—
–33
Max
—
—
–25
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.2, 2014-05-14