PTAC240502FC Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC240502FC
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance (main)
On-State Resistance (peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 120 mA
V_DS = 28 V, I_DQ = 0 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 60°C, 50 W CW)
Ordering Information
Type and Version
PTAC240502FC V1
PTAC240502FC V1 R250
Order Code
PTAC240502FCV1XWSA1
PTAC240502FCV1R250XTMA1
Symbol
V(_BR)DSS
I_DSS
I_DSS
R_DS(on)
R_DS(on)
V_GS
V_GS
I_GSS
Min
65
—
—
—
—
2.6
1.2
—
Typ
—
—
—
0.4
0.2
2.7
1.3
—
Max
—
1
10
—
—
2.8
1.5
1
Unit
V
µA
µA


V
V
µA
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
1.29
Unit
V
V
V
°C
°C
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.2, 2014-05-14