PTAC240502FC Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC240502FC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, V_GS1 = 2.6 V,
V_GS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
0
60
IMD Low
IMD Up
-10
ACPR
50
Efficiency
-20
40
-30
30
-40
20
-50
26
ptac240502fc_g2
10
30
34
38
42
46
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, V_GS1 = 2.6 V,
V_GS2 = 1.3 V, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-15
-20
-25
-30
-35
-40
-45
26
2300 IMDL
2300 IMDU
2350 IMDL
2350 IMDU
2400 IMDL
2400 IMDU
ptac240502fc_g3
30
34
38
42
46
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 120 mA
17
75
16
65
Gain
15
55
14
45
13
12 ^Efficiency
11
10
26 30
35
2300 MHz
25
2350 MHz
15
2400 MHz
ptac240502fc_g4
5
34 38 42 46 50
Output Power (dBm)
CW Performance
at various V_DD
I_DQ = 120 mA, ƒ = 2400 MHz
20
65
VDD = 24V
18
VDD = 28V
55
VDD = 32V
16
Gain
45
14
35
12
25
10
8
26
Efficiency
15
ptac240502fc_g5
5
30 34 38 42 46 50
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02.2, 2014-05-14