IRF6218SPBF Datasheet, PDF (6/9 Pages) Infineon Technologies AG – HEXFET® Power MOSFET

400
350
300
VGS = -10V
250
200
150
100
0
20
40
60
80
-ID , Drain Current (A)
Fig 12. On-Resistance vs. Drain Current
IRF6218SPbF
1000
900
800
700
600
500
400
300
200
100
0
4
ID = -27A
5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
900
ID
800
TOP
-4.6A
700
-6.3A
BOTTOM -16A
600
500
400
300
200
100
0
25
50
75
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
2016-5-26