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| IRF6218SPBF Datasheet, PDF (2/9 Pages) Infineon Technologies AG – HEXFET® Power MOSFET | |||
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IRF6218SPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
âââ
âââ
-3.0
âââ
âââ
âââ
âââ
Typ.
âââ
-0.17
120
âââ
âââ
âââ
âââ
âââ
Max. Units
Conditions
âââ
âââ
150
- 5.0
-25
-250
-100
100
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
mïï ï ï VGS = -10V, ID = -16A ï
V VDS = VGS, ID = -250µA
µA
VDS = -120V, VGS = 0V
VDS = -120V,VGS = 0V,TJ = 150°C
nA
VGS = -20V
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain (âMillerâ) Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
11 âââ âââ
âââ 71 110
âââ 21 âââ
âââ 32 âââ
âââ 21 âââ
âââ 70 âââ
âââ 35 âââ
âââ 30 âââ
âââ 2210 âââ
âââ 370 âââ
âââ 89 âââ
âââ 2220 âââ
âââ 170 âââ
âââ 340 âââ
S VDS = -50V, ID = -16A
ID = -16A
nC VDS = -120V
VGS = -10V ï
VDD = -75V
ns
ID = -16A
RG = 3.9ïï
VGS = -10V ï
VGS = 0V
VDS = -25V
Æ = 1.0MHz
pF VGS = 0V, VDS = -1.0V, Æ = 1.0MHz
VGS = 0V, VDS = -120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy ï
IAR
Avalanche Current ï
Typ.
âââ
âââ
Max.
210
-16
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ïï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
150
860
Max. Units
Conditions
-27
-110
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
-1.6 V TJ = 25°C,IS = -16A,VGS = 0V ïï
âââ ns TJ = 25°C ,IF = -16A, VDD = -25V
âââ nC di/dt = 100A/µs ïï ï
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature.
ï starting TJ = 25°C, L = 1.6mH, RG = 25ï, IAS = -17A
ï ISD ï£ï -17A, di/dt ï£ï -520A/µs, VDD ï£ï V(BR)DSS, TJ ï£ 175°C.
ï Pulse width ï£ï 300µs; duty cycle ï£ 2%.
ï
Rï± is measured at TJ of approximately 90°C.
ï When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
2016-5-26
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