IRF6218SPBF Datasheet, PDF (3/9 Pages) Infineon Technologies AG – HEXFET® Power MOSFET

IRF6218SPbF
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1
-4.5V
0.1
0.01
0.1
^{60µs PULSE WIDTH}
Tj = 25°C
1
10
100
-V _DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
1
-4.5V
0.1
0.1
^{60µs PULSE WIDTH}
Tj = 175°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
1.0
2
VDS = 50V
60µs PULSE WIDTH
4
6
8
10
12
-VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.5
ID = -27A
VGS = -10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-5-26