IRF6218SPBF Datasheet, PDF (1/9 Pages) Infineon Technologies AG – HEXFET® Power MOSFET

SMPS MOSFET
Applications
 Reset Switch for Active Clamp Reset DC-DC converters
V_DSS
- 150V
IRF6218SPbF
HEXFET^® Power MOSFET
R_DS(on) (max)
150m@ V_GS = -10V
I_D
-27A
Benefits
 Low Gate to Drain Charge to Reduce Switching Losses
 Fully Characterized Capacitance Including Effective
C_OSS to Simplify Design (See App. Note AN1001)
 Fully Characterized Avalanche Voltage and Current
 Lead-Free
G
Gate
D
Drain
D
S
G
D2 Pak
IRF6218SPbF
S
Source
Base part number Package Type
IRF6218SPbF
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF6218SPbF
IRF6218STRLPbF
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
dv/dt
Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
Max.
-150
± 20
- 27
-19
- 110
250
1.6
8.2
-55 to + 175
300
Typ.
–––
–––
Max.
0.61
40
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes  through  are on page 2
1
2016-5-26