IRF6218SPBF Datasheet, PDF (5/9 Pages) Infineon Technologies AG – HEXFET® Power MOSFET

IRF6218SPbF
30
25
20
15
10
5
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
1E-006
_{J J}
_{1 1}
R_1R1
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
Ci= iRi
R_2R2
_{2 2}
R_3R3
_{3 3}
_CC
Ri (°C/W)
0.264
0.206
0.140
i (sec)
0.000285
0.001867
0.013518
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-26