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BFP410 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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Collector current IC = ƒ(VBE)
VCE =2 V
BFP410
Collector current IC = ƒ(VCE)
Parameter IB
10 2
mA
10 1
10 0
10 -1
10 -2
25
mA
15
10
160µA
90µA
10 -3
10 -4
0.2
0.4
0.6
0.8
DC current gain hFE = ƒ(IC)
VCE =2 V
V
1.2
VBE
5
20µA
0
0
1
2
3
V
5
VCE
Base current reverse IB = ƒ(VEB)
10 3
10 2
10 0
µA
10 -1
10 -2
10 1
10 -3
10 -4
10
0
10
-1
10 0
10 1
mA 10 2
IC
10 -5
0
0.5
1
V
2
VEB
2010-04-09
6
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