BFP410 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Total power dissipation P_tot = ƒ(T_S)
BFP410
Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
180
mW
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 _°C 160
T_S
Transition frequency f_T= ƒ(I_C)
f = 2 GHz
V_CE = parameter in V
26
GHz
3 to 4V
2V
22
1V
20
18
16
14
0.5V
12
10
8
6
4
2
0 4 8 12 16 20 24 mA 32
I_C
0.3
pF
0.2
0.15
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 V 4
V_CB
Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 2 V, I_C = 13 mA
45
dB
35
30
25
20
15
10
5
0
0
Gms
|S21|²
2
4
Gma
6
GHz
10
f
2010-04-09
4