BFP410 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 2V
f = parameter in GHz
40
dB
0.15GHz
32
0.45GHz
28
0.9GHz
1.5GHz
24
1.9GHz
20
2.4GHz
16
3.5GHz
12
5.5GHz
8
10GHz
4
0
0 4 8 12 16 20 24 28 mA 36
I_C
Noise figure F = ƒ(I_C)
V_CE = 2 V, Z_S = Z_Sopt
BFP410
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 13 mA
f = parameter in GHz
40
dB
0.15GHz
32
28
24
20
16
12
8
4
0
0
1
2
3
Noise figure F = ƒ(I_C)
V_CE = 2 V, f = 2 GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
4
V
6
V_CE
4.5
dB
3.5
3
2.5
2
1.5
f= 10.0 GHz
1
f= 5.5 GHz
f= 2.4 GHz
f= 1.8 GHz
0.5
f= 0.9 GHz
f= 0.45 GHz
0
0 4 8 12 16 20 24 mA 30
I_C
4
dB
3
2.5
2
1.5
1
ZS=50Ohm
ZS=ZSopt
0.5
0
0
4
8
12
16 mA
24
I_C
2010-04-09
5