 English |
|
|
|
|
|
|
|
| BFP410 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
| |||
| ◁ |
BFP410
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 2 V, VBE = 0
VCE = 5 V, VBE = 0 , TA = 85 °C
(verified by random sampling)
V(BR)CEO 4.5
5
-V
ICES
nA
-
1
30
-
2
50
Collector-base cutoff current
VCB = 2 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 13 mA, VCE = 2 V, pulse measured
ICBO
IEBO
hFE
-
1
30
- 0.001 0.6 µA
60 95 130 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2010-04-09
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese